AC Metal 1
Apparatus | AC450 No. 08 |
Supplier | Alliance Concept |
Location | P.00.330 |
Main purpose | Sputter deposition |
System layout | DC and RF magnetron sputter deposition (4 x 107.5 mm target) RF sputter etching
|
Gasses | Ar, N2 |
Power supply | 600W Huttinger RF and 1500W DC source for deposition 300 W Huttinger RF source for sputter etch
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Process information | standard materials: Cr, Mo, W, Co optional materials: B, Ni Note: magnetic materials in AC-Metal 1 |
Facilities | static and dynamic deposition reactive sputtering (with N2) co-sputtering from two targets simultaneously (1xDC and 1xRF) RGA to analyse background pressure of process chamber
|
Specimen | max. 100mm wafers, small pieces allowed |
Equipment owner | Marinus Fischer +31 628906207
Bas van Asten (back-up) +31 642481091 |