Dry Etching Recipe for Titanium in Fluor Based RIE
Recipe
| Gasses: | |
CHF3 | 100 sccm |
O2 | 2.5 sccm |
| Pressure | 5.00 Pa |
| RF Power | 100 W |
| Bias potential | -120 V |
Etch characteristics
| etching is anisotropic |
Selectivity
| Etch rate of AZ 1420: 8 nm/min (selectivity: 4) |
| Etchrate of Si: 2 nm/min (selectivity: 16) |
Remarks
| Etch rate is somewhat aspect ratio dependent |
| The wafer heats up considerably during etching (Mask choice) |
| Wafer uniformity: 10 % |
| Reproducibility: 15% |
| Etch rate is almost proportional to RF power |
| PMMA inhibits etching at high pressure |
| Recommended mask is hard baked AZ 1420 |