Dry Etch Recipe for Silicon in Cryogenic ICP System
Recipe
| Gasses: | |
SF6 | 440 scm |
Gas O2 | 36 sccm |
Pressure | 4.31 Pa |
RF ICP Power | 1050 W |
Bias voltage | -40 V |
Temperature | -124 °C |
Position | 9 cm |
Etch characteristics
| Etch Rate |
| 4 um/min for Si (100) |
| 2 um/min for Si (111) |
| Anisotropic |
Remarks
| Etch characteristics depend on the crystal orientation maximum obtainable aspectratios: |
| 17 for Si(100) |
| 8 for Si(111) |
| This process has been thoroughly investigated: |
| M.A. Blauw, Deep anisotropic dry etching of silicon micorstructures by high-density plasma, PhD Thesis, 2004, ISBN 90-9017644-6 |