Investigation of Pulse current capabilities of IGBTs and MOSFETs

MSc - thesis of Ajeeth Soundararajan

This Master Thesis intends to find Pulse current capabilities of IGBTs and MOSFETs of lower current rating to achieve Pulse currents of magnitude 850 A. Literature review compared IGBTs, MOSFETs and their types to identify most promising device that could deliver such high pulse currents.  Pulse current test setup was built and factors affecting Pulse current were identified. Pulse current tests were performed and SiC MOSFET C3M0016120D of rating 81 A produced pulse currents of highest magnitude of 905 A.